Theoretical studies of photovoltaic properties of five new silol dithiophene based D2-A-D1-A-D2 donors

Organic solar cell of silol dithiophene based D₂-A-D₁-A-D₂/PC₇₁BM (D: donor part; A: acceptor part; 1 and 2 denote different units) possesses promising power conversion efficiency. Researchers have studied D₂-A-D₁-A-D₂ molecules carefully, including the effects of the different number of terminal thiophenes, the different central moiety (D₁), and the length of the alkyl chain. However, there are few investigations, especially theoretical studies, on the influences of different A (acceptor) units on the properties of D₂-A-D₁-A-D₂ molecule. In the present work, we have designed and modeled five new D₂-A-D₁-A-D₂ (D₂ = bithiophene and D₁ = silol dithiophene) donors by changing A units (A = diketopyrrolopyrrole, naphtho[1,2-c:5,6-c′]bis[1,2,5]thiadiazole, 5-fluoro-2,1,3-benzoselenadiazole, benzobisthiadiazole, and thiazolo[5,4-d]thiazole). We have applied density functional theory (DFT) and time-dependent DFT to predict their ground-state electronic structures and the UV–vis spectra, and the open circuit voltages (Vocs) of organic solar cells of D₂-A-D₁-A-D₂/PC₇₁BM. Based on the calculated results, we find that bithiophene thiazolo[5,4-d]thiazole siloldithiophene (BTTS) (D₂ = bithiophene, A = thiazolo[5,4-d]thiazole, D₁ = silol dithiophene) possesses the highest lowest unoccupied molecular orbital (−2.60 eV) and the lowest highest occupied molecular orbital (−5.33 eV) energies, and the strongest absorption in the visible region. Besides, the solar cell of BTTS/PC₇₁BM has the highest Voc of 1.02 V. These results indicate that it may be a promising donor. In contrast, bithiophene benzobisthiadiazole siloldithiophene (BBBS) (A = benzobisthiadiazole) has low absorption strength in the visible region, which indicates that it may not be a suitable donor material.     

A super-junction SOI-LDMOS with low resistance electron channel

A novel super-junction LDMOS with low resistance channel(LRC), named LRC-LDMOS based on the silicon-oninsulator(SOI) technology is proposed. The LRC is highly doped on the surface of the drift region, which can significantly reduce the specific on resistance(Ron,sp) in forward conduction. The charge compensation between the LRC, N-pillar,and P-pillar of the super-junction are adjusted to satisfy the charge balance, which can completely deplete the whole drift,thus the breakdown voltage(BV) is enhanced in reverse blocking. The three-dimensional(3 D) simulation results show that the BV and R_(on,sp) of the device can reach 253 V and 15.5 mΩ·cm~2, respectively, and the Baliga's figure of merit(FOM = BV~2/R_(on,sp)) of 4.1 MW/cm~2 is achieved, breaking through the silicon limit.     

Tailored side‐chain architecture of benzil voltage stabilizers for enhanced dielectric strength of cross‐linked polyethylene

The synthesis and physico‐chemical properties of seven benzil‐type voltage stabilizers are reported. The benzil core is substituted with alkyl chains of different length that are linked to the benzil core via an ester, ether, or tertiary amine group. All additives can be melt‐processed with low‐density polyethylene (LDPE). Fourier‐transform infrared spectroscopy confirms that benzil compounds are not affected by the LDPE cross‐linking reaction induced by dicumyl peroxide. Moreover, a combination of gel content measurements, thermal analysis, and small‐angle X‐ray scattering indicates that the presence of benzil voltage stabilizers does not significantly alter the microstructure of cross‐linked polyethylene (XLPE). Electrical tree inhibition experiments under high‐voltage alternating current conditions show that all investigated additives substantially enhance the dielectric strength of the insulating material at a concentration of only 10 mmol kg^?1. The highest improvement in dielectric strength, of more than 70% with respect to reference XLPE, is obtained with voltage stabilizers, which carry short (methyl) side chains that are linked to the benzil core via an ester or tertiary amine group. © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2014 , 52, 1047–1054     

Sulfone-based high-voltage electrolytes for high energy density rechargeable lithium batteries:Progress and perspective

Further enhancement in the energy density of rechargeable lithium batteries calls for high-voltage cathode materials and stable anodes,as well as matched high-voltage electrolytes without compromising the overall property of batteries.Sulfone-based electrolytes have aroused great interest in recent years owing to their wide electrochemical window and high safety.However,significant challenges such as the complexity of synthesis,high melting point(typically above room temperature),high viscosity,and their poor compatibility with graphite-based anodes have drastically impeded their practical applications.In this review,recent progress of sulfone solvents in high energy density rechargeable lithium batteries is summarized theoretically and experimentally.More importantly,general improvement methods of sulfone-based electrolytes,such as adding additives and cosolvents,structural modifications of sulfo ne,superconcentrated salt strategy are briefly discussed.We expect that this review provides inspiration for the future developments of sulfone-based high-voltage electrolytes(SHVEs) and their widespread applications in high specific energy lithium batteries.     

Remarkably improved cycling stability of 3D porous Cu–Sn anode for lithium-ion full cells by adjusting working voltage range

Numerous studies confirm that three dimensional porous Cu–Sn (3DP Cu–Sn) anode possesses good application prospect in light of its desirable electrochemical performance on lithium ion half cells, but there are a few related systematic researches on lithium ion full cells until now, which is indispensable before its commercialization. Herein, the effects of galvanostatic charge-discharge voltage range on the cycling stability of 3DP Cu–Sn anode for lithium ion full cells are investigated systematically. The results show that the suitable charge-discharge voltage range plays a key role in improving the reversible capacity and cycling stability of the 3DP Cu–Sn||LiCoO₂ full cell, which is closely related to maintaining the electrode structure stable by controlling the amount of Li⁺ extracted and inserted. Especially, in the voltage range of 1.2–3.9 ​V, the full cell exhibits remarkably improved electrochemical properties with the high initial reversible capacity of 2.71 ​mAh cm⁻² and 71.95% capacity retention upon 80 cycles. We believe that this work can provide a significant reference for the practical application of porous Sn-based anodes.     

二硫化锡纳米片阻变存储器的制备与性能

采用水热法合成了尺寸为50~100 nm的二硫化锡纳米片,并首次以二硫化锡作为阻变层材料的阻变存储器（Cu/PMMA/SnS₂/Ag,PMMA=聚甲基丙烯酸甲酯）,对其阻变性能进行了研究。结果表明： Cu/PMMA/SnS₂/Ag阻变存储器的开关比约10⁵,耐受性2.7×10³。在上述2项性能指标达到较优水平的同时,开态与关态电压分别仅约为0.28与-0.19 V。     

硅微陀螺梳齿驱动的面内失准分析

静电梳齿微驱动器因其结构简单、功耗低、灵敏度高、受温度影响小，成为硅微陀螺仪的主要驱动方式。静电梳齿微驱动器通常由活动梳齿和固定梳齿组成。理想情况下，活动梳齿平行地位于两固定梳齿中心位置。但由于加工误差、驱动结构不对称、扰动等因素，使得活动梳齿相对固定梳齿发生偏转。该文应用能量法及虚功原理，建立了梳齿之间的力与力矩平衡方程。得出了非理想情况下，偏离距离和转角的解析表达式，并分析得出了梳齿间的临界电压。经过数值仿真发现，梳齿面内既偏转又转动时的临界电压小于只发生偏转或转动时的临界电压。     

Effect of gate engineering in JLSRG MOSFET to suppress SCEs: An analytical study

In this work, an analytical model of gate-engineered junctionless surrounding gate MOSFET (JLSRG) has been proposed to uncover its potential benefit to suppress short-channel effects (SCEs). Analytical modelling of centre potential for gate-engineered JLSRG devices has been developed using parabolic approximation method. From the developed centre potential, the parameters like threshold voltage, surface potential, Electric Field, Drain-induced Barrier Lowering (DIBL) and subthershold swing are determined. A nice agreement between the results obtained from the model and TCAD simulation demonstrates the validity and correctness of the model. A comparative study of the efficacy to suppress SCEs for Dual-Material (DM) and Single-Material (SM) junctionless surrounding gate MOSFET of the same dimensions has also been carried out. Result indicates that TM-JLSRG devices offer a noticeable enhancement in the efficacy to suppress SCEs by as compared to SM-JLSRG and DM-JLSRG device structures. The effect of different length ratios of three channel regions related to three different gate materials of TM-JLSRG structure on the SCEs have also been discussed. As a result, we demonstrate that TM-JLSRG device can be considered as a competitive contender to the deep-submicron mainstream MOSFETs for low-power VLSI applications.